document number: 94550 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 ultrafast rectifier, 2 x 3 a fred pt ? vs-6cwh02fnpbf vishay semiconductors features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? compliant to rohs directive 2002/95/ec ? meets msl level 1, per j-std-020, lf maximum peak of 260 c description/applications vishay semiconductors 200 v series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. the planar structure and th e platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package d-pak (to-252aa) i f(av) 2 x 3 a v r 200 v v f at i f 1.0 v t rr typ. see recovery table t j max. 175 c diode variation common cathode base common cathode common cathode 2 4 13 anode anode d-pak (to-252aa) absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current per device i f(av) total device, rated v r , t c = 159 c 6 a non-repetitive peak surge current i fsm 50 peak repetitive forw ard current per diode i fm rated v r , square wave, 20 khz, t c = 159 c 6 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test cond itions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 3 a - - 1 i f = 3 a, t j = 125 c - - 0.9 i f = 6 a - - 1.2 i f = 6 a, t j = 125 c - - 1.08 reverse leakage current i r v r = v r rated - - 5 a t j = 125 c, v r = v r rated - - 100 junction capacitance c t v r = 200 v - 12 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94550 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 13-jan-11 vs-6cwh02fnpbf vishay semiconductors ultrafast rectifier, 2 x 3 a fred pt ? dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test cond itions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - - 35 ns t j = 25 c i f = 3 a v r = 160 v di f /dt = 200 a/s -19- t j = 125 c - 26 - peak recovery current i rrm t j = 25 c - 3.1 - a t j = 125 c - 4.6 - reverse recovery charge q rr t j = 25 c - 30 - nc t j = 125 c - 60 - thermal - mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc --5 c/w thermal resistance, junction to am bient per leg r thja --80 thermal resistance, case to heatsink r thcs --- weight -0.3-g -0.01-oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style d-pak 6cwh02fn
document number: 94550 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-6cwh02fnpbf ultrafast rectifier, 2 x 3 a fred pt ? vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 tj = 25c tj = 125c tj = 175c reverse voltage - v r (v) reverse current - i r (a) 0.001 0.01 0.1 1 10 100 050100150200 25?c t = 175?c j 100?c 125?c 150?c reverse voltage - v r (v) junction capacitance - c t (pf) 10 100 1 10 100 1000 t = 25?c j t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.5 d = 0.2
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94550 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 13-jan-11 vs-6cwh02fnpbf vishay semiconductors ultrafast rectifier, 2 x 3 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 1 2 3 4 5 130 140 150 160 170 180 dc see note (1) square wave (d=0.50) rated vr applied average power loss ( watts ) average forward current - i f (av) (a) 012345 0 1 2 3 4 5 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 rms limit dc trr ( nc ) di f /dt (a/s ) 10 20 30 40 50 0 0 0 1 0 0 1 if = 3 a if = 6 a r j j v = 30v t = 125?c t = 25?c qrr ( nc ) di f /dt (a/s ) 0 20 40 60 80 100 120 140 0 0 0 1 0 0 1 r j j v = 30v t = 125?c t = 25?c if = 6 a if = 3 a
document number: 94550 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-6cwh02fnpbf ultrafast rectifier, 2 x 3 a fred pt ? vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94550 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 13-jan-11 vs-6cwh02fnpbf vishay semiconductors ultrafast rectifier, 2 x 3 a fred pt ? ordering information table links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95059 packaging information www.vishay.com/doc?95033 2 - current rating (6 = 6 a) 1 - vishay semiconductors product 3 - center tap configuration - 4 4 - package identifier: w = d-pak 5 - h = hyperfast recovery 6 - voltage rating (02 = 200 v) 7 - fn = to-252aa 8 - none = tube (50 pieces) tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) - pbf = lead (pb)-free 9 device code 5 1 3 2 4 6 7 8 9 6 vs- c w h 02 fn trl pbf
document number: 95016 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 04-nov-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 d-pak (to-252aa) outline dimensions vishay high power products notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a mi nimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not include mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 applied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa dimensions in millimeters and inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b 3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b 2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? ga u ge plane lead tip m 0.010 cab m 32 4 1 e1 d1 mi n . 0.265 (6.74) mi n . 0.245 (6.23) mi n . 0.0 8 9 (2.2 8 ) mi n . 0.06 (1.524) 0.4 88 (12.40) 0.409 (10.40) 0.093 (2.3 8 ) 0.0 8 5 (2.1 8 ) pad layout
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